Silicon Carbon-Nitride (SiCxNy:H) by High Target Utilisation System (HiTUS) for crystalline silicon solar cell anti-reflective coating and passivation
SiCxNy:H films were deposited as anti-reflective (ARC)– passivation layers on crystalline silicon photovoltaics. The thin films were deposited using a remote plasma sputtering system HiTUS (High Target Utilisation Sputtering). The HiTUS allows the deposition of SiCxNy:H avoiding the use of pyrophori...
Saved in:
Main Authors: | Piotr Kaminski, Kevin Bass, Bianca Maniscalco, Michael Walls, Gianfranco Claudio |
---|---|
Format: | Default Conference proceeding |
Published: |
2011
|
Subjects: | |
Online Access: | https://hdl.handle.net/2134/14668 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Room temperature surface passivation of silicon for screen printed c-Si solar cells by HiTUS reactive sputter deposition
by: Gianfranco Claudio, et al.
Published: (2014) -
Passivation of silicon wafers by Silicon Carbide (SiCx) thin film grown by sputtering
by: Piotr Kaminski, et al.
Published: (2011) -
High bandgap dielectrics for antireflective coating in silicon solar cells by reactive ion sputtering
by: Piotr Kaminski, et al.
Published: (2011) -
Multilayer antireflection coatings for cover glass on silicon solar modules
by: Adam Law, et al.
Published: (2022) -
Structural analysis of thin film silicon PV modules by means of large area laser beam induced current measurements
by: Pongpan Vorasayan, et al.
Published: (2006)