Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm2 Short-Circuit Current
IEEE An 800 nm CdSeTe layer was added to the CdTe absorber used in high-efficiency CdTe cells to increase the current and produce an increase in efficiency. The CdSeTe layer employed had a band-gap near 1.41 eV, compared with 1.5 eV for CdTe. This lower band-gap enabled a current density increase fr...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Default Article |
| Published: |
2017
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/32170 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|