Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell

Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell

As part of the device fabrication process, selenization step is required to crystallise the CIGS absorber layer. However, during high temperature selenization process, excessive formation of MoSe2can lead to delamination of the film and adverse effect on electrical properties of the solar cells. In...

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Bibliographic Details
Main Authors: Kam Hoe Ong, Agileswari Ramasamy, Panagiota Arnou, Bianca Maniscalco, Jake Bowers, Chakrabarty Chandan Kumar, Marayati Bte Marsadek
Format: Default Article
Published: 2018
Subjects:
Mechanical engineering not elsewhere classified
Copper Indium Gallium Selenide
CIGS thin film solar cells
MoOx barrier layer
Atmospheric plasma jet
MoSe2
Mechanical Engineering not elsewhere classified
Online Access:https://hdl.handle.net/2134/35318
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https://hdl.handle.net/2134/35318

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