Incorporation of copper into indium gallium selenide layers from solution
A chemical method for the incorporation of copper into indium gallium selenide (IGS) layers has been developed. The resulting copper-containing precursor layers have been annealed in the presence of selenium vapour with the goal of forming Cu(In, Ga)Se2 (CIGS) layers. It is found that copper ions in...
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| Main Authors: | , , , , |
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| Format: | Default Conference proceeding |
| Published: |
2008
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| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/4892 |
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