On reproducing the copper extrusion of through-silicon-vias from the atomic scale
Three-dimensional system integration with through-silicon-vias (TSVs) is regarded as a promising solution to the 'More-than-Moore' challenge to improve the performance of micro- and nano-electronic devices. However, the copper extrusion of TSVs during the back-end-of-the-line (BEOL) proces...
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Main Authors: | , , , , , |
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Format: | Default Conference proceeding |
Published: |
2017
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Subjects: | |
Online Access: | https://hdl.handle.net/2134/28448 |
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