Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system
The use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe2 formation. This enabled longer selenization time, enhanced grain growth and performance.
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Default Article |
| Published: |
2019
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/37249 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|