The emergence of quantum capacitance in epitaxial graphene
We found an intrinsic redistribution of charge arises between epitaxial graphene, which has intrinsically n-type doping, and an undoped substrate. In particular, we studied in detail epitaxial graphene layers thermally elaborated on C-terminated 4H-SiC( 4H-SiC(000-1)). We have investigated the charg...
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| Main Authors: | , , , , , , |
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| Format: | Default Article |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/21741 |
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