Outstanding properties of epitaxial graphene grown from silicon carbide substrate
In this thesis a study of outstanding properties of epitaxial graphene on SiC were carried out involving Raman spectroscopy, AFM, UFM, XPS, Photoelectric effect and electrical resistivity. Epitaxial graphene was grown from a semi-insulating on-axis 6H (000-1) or 4H-SiC (000-1) substrate. Epitaxial g...
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| Format: | Default Thesis |
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2018
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| Online Access: | https://dx.doi.org/10.26174/thesis.lboro.8132039.v1 |
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