Temperature control of diffusive memristor hysteresis and artificial neuron spiking
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, resistive switching occurs because of the sequential formation and rupture of conduction filaments between device electrodes due to drift and di...
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| Main Authors: | , , , , , , , |
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| Format: | Default Article |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/21946733.v1 |
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