Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors

Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy....

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Bibliographic Details
Main Authors: EE Vdovin, A Mishchenko, Mark Greenaway, MJ Zhu, D Ghazaryan, A Misra, Y Cao, SV Morozov, O Makarovsky, TM Fromhold, A Patanè, GJ Slotman, MI Katsnelson, AK Geim, KS Novoselov, L Eaves
Format: Default Article
Published: 2016
Subjects:
Graphene
Photons
Transistors
Methods in transport
Online Access:https://hdl.handle.net/2134/12998927.v1
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https://hdl.handle.net/2134/12998927.v1

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