Structural and ferroelectric properties of Sr1−xBaxBi2Nb2O9 thin films obtained by dip-coating

The paper presents the structural and ferroelectric results for Sr 1 − x BaxBi2Nb2O9( x = 0 . 3 0 ; 0.85) thin films, which were obtained by using dip-coating. The solutions containing the desirable ions were prepared from the powders of the previous studied ceramic samples. The films were deposited...

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Bibliographic Details
Published in:Journal of advanced dielectrics 2017-10, Vol.7 (5), p.1750035-1-1750035-5
Main Authors: González-Abreu, Y., Peláiz-Barranco, A., Saint-Grégoire, P., Moreno-Crespo, C. E., Limborço, H., González, J. C.
Format: Article
Language:English
Subjects:
Aurivillius
Ceramic powders
Chemical composition
Condensed Matter
Crystallization
Dip coatings
Dispersion
Ellipsometry
Energy gap
Ferroelectric materials
Ferroelectricity
Ferroelectrics
Fluorine
Grain structure
Heat treatment
Hysteresis loops
Immersion coating
Materials Science
Organic chemistry
Physics
relaxor
Relaxors
Scanning microscopy
Spectrum analysis
Substrates
Thin films
Tin oxides
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Summary:The paper presents the structural and ferroelectric results for Sr 1 − x BaxBi2Nb2O9( x = 0 . 3 0 ; 0.85) thin films, which were obtained by using dip-coating. The solutions containing the desirable ions were prepared from the powders of the previous studied ceramic samples. The films were deposited at room temperature on Fluorine-doped Tin Oxide (FTO) substrates and submitted to a heat treatment for crystallization. The films were characterized by using scanning microscopy electronic, energy dispersive spectroscopy and ellipsometry. Hysteresis ferroelectric loops were obtained, at room temperature, by using a Sawyer-Tower circuit at several frequencies. A well-defined grain structure was observed for both compositions. The energy dispersive spectroscopy (EDS) measurements revealed the presence of the corresponding elements from the chemical composition of the ceramic systems. The band-gap energy was around 3.3 eV for both samples. Typical hysteresis loops for normal and relaxor ferroelectrics were obtained for x = 0 . 3 0 and 0.85, respectively.
ISSN:2010-135X
2010-1368
DOI:10.1142/S2010135X17500357