High‐Stability and Low‐Noise Multilevel Switching in In3SbTe2 Material for Phase Change Photonic Memory Applications

Herein, eight uniform optical states (3 bit) are demonstrated by irradiating nanosecond laser pulses on thin In3SbTe2 films having high stability (260 °C), revealing at least 1% reflectivity contrast between any two consecutive states with strikingly low noise variation of 0.18% at each level, which...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2021-03, Vol.15 (3), p.n/a
Main Authors: Arjunan, Mozhikunnam Sreekrishnan, Saxena, Nishant, Mondal, Anirban, Dixit, Tejendra, Adarsh, Kumaran Nair Valsala Devi, Manivannan, Anbarasu
Format: Article
Language:English
Subjects:
In3SbTe2
multilevel switching
phase-change materials
phase-change photonic memory
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Summary:Herein, eight uniform optical states (3 bit) are demonstrated by irradiating nanosecond laser pulses on thin In3SbTe2 films having high stability (260 °C), revealing at least 1% reflectivity contrast between any two consecutive states with strikingly low noise variation of 0.18% at each level, which is almost a 50% lower value compared to Ge2Sb2Te5 and AgInSbTe materials, revealing the two times enhanced signal‐to‐noise ratio of the In3SbTe2 material. Furthermore, a systematic structural evolution during multilevel switching is investigated using confocal Raman spectroscopic studies. The experimental findings demonstrate low‐noise yet highly stable multilevel switching toward the development of reliable phase change photonic memory devices. The precise tuning of the crystalline and amorphous fraction with minimum optical variations is crucial for next‐generation photonic memory devices using phase‐change materials. The higher thermal stability with large reflectivity contrast in single‐phase In3SbTe2 offers precise tuning of multilevel set and reset states, which demands minimum optical variations.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.202000354