High‐Performance GaN HEMTs with I ON/I OFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric

Herein, Ta2O5 high‐k gate dielectric‐based GaN high electron‐mobility transistors (HEMTs) with a high I ON/I OFF ratio and low gate leakage current are demonstrated without any significant deterioration of the other performance parameters. Ta2O5 with an average surface roughness of 1.8 nm and a diel...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2022-06, Vol.219 (12), p.n/a
Main Authors: Upadhyay, Bhanu B., Surapaneni, Sreenadh, Yadav, Yogendra K., Bhardwaj, Navneet, Suvachintak, Netaji, Ganguly, Swaroop, Saha, Dipankar
Format: Article
Language:English
Subjects:
gate leakage
high-k
I ON/I OFF
interface traps
oxide HEMT
Ta2O5
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Summary:Herein, Ta2O5 high‐k gate dielectric‐based GaN high electron‐mobility transistors (HEMTs) with a high I ON/I OFF ratio and low gate leakage current are demonstrated without any significant deterioration of the other performance parameters. Ta2O5 with an average surface roughness of 1.8 nm and a dielectric constant of ≈26 are grown by sputtering and annealing in O2. The bandgap, valence, and conduction band offsets with Al0.3Ga0.7 N are 4.85, 0.24, and 0.61 eV, respectively. The reverse gate leakage current at −7 V is observed to be 1.2 ×10−10 A mm−1 for 5 nm and
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202100839