BORON ACCUMULATION AT EPISUBSTRATE SILICON INTERFACE DURING EPITAXIAL-GROWTH

Boron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulatio...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1992-10, Vol.15 (1), p.32-36
Main Authors: PIVAC, B, BORGHESI, A, GEDDO, M, SASSELLA, A, PEDROTTI, M
Format: Article
Language:English
Subjects:
Materials Science
Materials Science, Multidisciplinary
Physical Sciences
Physics
Physics, Condensed Matter
Science & Technology
Technology
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Summary:Boron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulation is shown to occur for epilayers of standard thickness (approximately 10 mum), with boron being electrically unactive.
ISSN:0921-5107
DOI:10.1016/0921-5107(92)90025-5