COIMPLANTATION AND ELECTRICAL-ACTIVITY OF C IN GAAS - STOICHIOMETRY AND DAMAGE EFFECTS

We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless...

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Bibliographic Details
Published in:	Applied physics letters 1992-05, Vol.60 (19), p.2383-2385
Main Authors:	MOLL, AJ, YU, KM, WALUKIEWICZ, W, HANSEN, WL, HALLER, EE
Format:	Article
Language:	eng
Subjects:	360605 - Materials- Radiation Effects 360606 - Other Materials- Physical Properties- (1992-) ACTIVATION ANALYSIS ALLOYS ANNEALING ARSENIC COMPOUNDS ARSENIDES CARBON ADDITIONS CARRIER DENSITY Charge carriers: generation, recombination, lifetime, and trapping CHEMICAL ANALYSIS Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators CRYSTAL DOPING Electronic transport in condensed matter Exact sciences and technology GALLIUM ARSENIDES GALLIUM COMPOUNDS HEAT TREATMENTS ION IMPLANTATION MATERIALS SCIENCE PHYSICAL RADIATION EFFECTS Physical Sciences Physics Physics, Applied PNICTIDES RADIATION EFFECTS Science & Technology STOICHIOMETRY
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Summary:	We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless of the chemical nature of the coimplant. Maintaining stoichiometry by coimplanting a group III element further increased activation in substrates heavily damaged during implantation. Activation of 65 +/- 3%, corresponding to a sheet free-carrier concentration of 3.5 X 10(14) cm-2, was achieved by coimplanting Ga and annealing at 950-degrees-C for 10 s.
ISSN:	0003-6951 1077-3118