OXIDE RELIABILITY CRITERION FOR THE EVALUATION OF THE ENDURANCE PERFORMANCE OF ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORIES

The impact of the oxide reliability on the endurance performance of nonvolatile memories [electrically erasable read only memories (EEPROMs)] is analyzed quantitatively. The degradation rate of tunnel SiO2 layers as obtained from EEPROM cells as well as tunnel oxide capacitors subjected to different...

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Bibliographic Details
Published in:Journal of applied physics 1992-05, Vol.71 (9), p.4589-4593
Main Authors: PAPADAS, C, GHIBAUDO, G, PANANAKAKIS, G, RIVA, C, MORTINI, P
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Physical Sciences
Physics
Physics, Applied
Science & Technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The impact of the oxide reliability on the endurance performance of nonvolatile memories [electrically erasable read only memories (EEPROMs)] is analyzed quantitatively. The degradation rate of tunnel SiO2 layers as obtained from EEPROM cells as well as tunnel oxide capacitors subjected to different modes of electrical stress (write/erase operations, static and dynamic stress) are compared and attributed to a specific charge generation mechanism. Furthermore, a reliability criterion for the optimization of the tunnel oxide technology entering the fabrication of EEPROM cells is also proposed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.350758