Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces

We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, t...

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Bibliographic Details
Published in:	Applied physics letters 2003-12, Vol.83 (23), p.4830-4832
Main Authors:	Borgstrom, M., Samuelson, L., Seifert, W., Mikkelsen, A., Ouattara, L., Lundgren, E.
Format:	Article
Language:	eng
Subjects:	Atom and Molecular Physics and Optics Atom- och molekylfysik och optik Condensed Matter Physics Den kondenserade materiens fysik Fysik Natural Sciences Naturvetenskap Physical Sciences
Online Access:	Get full text
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Summary:	We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic–phosphorus exchange reactions.
ISSN:	0003-6951 1077-3118