Effect of in-plane ordering on dielectric properties of highly {111}-oriented bismuth–zinc–niobate thin films

Bi 1.5− x Zn 0.92− y Nb 1.5 O 6.92− δ (BZN) thin films were grown by pulsed laser deposition on two different Pt-covered substrates, namely textured {111}Pt/TiO 2 /SiO 2 /(100)Si substrate (Pt/Si) and epitaxial {111}Pt/R-plane sapphire substrate (Pt/sapphire). In both cases, the BZN films present {1...

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Bibliographic Details
Published in:	Journal of materials science 2017-10, Vol.52 (19), p.11306-11313
Main Authors:	Le Febvrier, A., Députier, S., Demange, V., Bouquet, V., Galca, A. C., Iuga, A., Pintilie, L., Guilloux-Viry, M.
Format:	Article
Language:	eng
Subjects:	Analysis Bismuth Ceramics Characterization and Evaluation of Materials Chemical Sciences Chemistry and Materials Science Classical Mechanics Crystallography and Scattering Methods Dielectric loss Dielectric materials Dielectric properties Electric properties Electrical conductivity Epitaxy Material chemistry Materials Science Movies Polymer Sciences Pulsed laser deposition Pulsed lasers Sapphire Silicon dioxide Silicon films Silicon substrates Solid Mechanics Thin films Titanium dioxide Zinc (Metal)
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Summary:	Bi 1.5− x Zn 0.92− y Nb 1.5 O 6.92− δ (BZN) thin films were grown by pulsed laser deposition on two different Pt-covered substrates, namely textured {111}Pt/TiO 2 /SiO 2 /(100)Si substrate (Pt/Si) and epitaxial {111}Pt/R-plane sapphire substrate (Pt/sapphire). In both cases, the BZN films present {111} and {100} out-of-plane orientations, in relative ratios of 65:35 on Pt/Si and 80:20 on Pt/sapphire, respectively. The film grown on Pt/Si is textured, while the film deposited on Pt/sapphire presents epitaxial-like relationships with the substrate, for both out-of-plane orientations. Dielectric measurements were taken on both types of thin films, using Pt/BZN/Pt planar capacitor structures. The BZN/Pt/sapphire film presents higher dielectric constant (245 at 100 kHz) and higher tunability (12% at 600 kV/cm) than the BZN/Pt/Si film (200; 6%), while the dielectric losses values are nearly same (~0.05).
ISSN:	0022-2461 1573-4803 1573-4803