Phase Formation and Electronic Structure Peculiarities in the Al1 – xSix Film Composites under the Conditions of Magnetron and Ion-Beam Sputtering

The peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al 0.75 Si 0.25 composition obtained by the magnetron and ion-beam sputtering methods on a Si(100) silicon substrate are studied using the X-ray diffraction techniques and ultrasoft X-ray...

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Bibliographic Details
Published in:Physics of the solid state 2018-05, Vol.60 (5), p.1021-1028
Main Authors: Terekhov, V. A., Usol’tseva, D. S., Serbin, O. V., Zanin, I. E., Kulikova, T. V., Nesterov, D. N., Barkov, K. A., Sitnikov, A. V., Lazaruk, S. K., Domashevskaya, E. P.
Format: Article
Language:English
Subjects:
Physics
Physics and Astronomy
Solid State Physics
Surface Physics and Thin Films
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Summary:The peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al 0.75 Si 0.25 composition obtained by the magnetron and ion-beam sputtering methods on a Si(100) silicon substrate are studied using the X-ray diffraction techniques and ultrasoft X-ray emission spectroscopy. In addition to silicon nanocrystals of about 25 nm in size, an ordered solid solution corresponding to the previously unknown Al 3 Si phase is formed in magnetron sputtering on a polycrystalline Al matrix. Films obtained by ion-beam sputtering of the composite target are found to be monophasic and contained only one phase of an ordered solid solution of aluminum silicide Al 3 Si of the Pm3m cubic system with the primitive cell parameter a = 4.085 Å. However, subsequent pulsed photon annealing of the composite with different radiation doses from 145 to 216 J/cm 2 gives rise to the partial decomposition of the Al 3 Si phase with the formation of free metallic aluminum and silicon nanocrystals with sizes in the range from 50 to 100 nm, depending on the pulsed photon radiation dose.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783418050311