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Reactor scale simulations of ALD and ALE: Ideal and non-ideal self-limited processes in a cylindrical and a 300 mm wafer cross-flow reactor
We have developed a simulation tool to model self-limited processes such as atomic layer deposition (ALD) and atomic layer etching inside reactors of arbitrary geometry as well the output of in situ quartz crystal microbalance and mass spectrometry. We have applied this model to two standard types o...
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Published in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2021-12, Vol.39 (6) |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We have developed a simulation tool to model self-limited processes such as atomic layer
deposition (ALD) and atomic layer etching inside reactors of arbitrary geometry as well
the output of in situ quartz crystal microbalance and mass spectrometry.
We have applied this model to two standard types of cross-flow reactors: a cylindrical
tube reactor and a model 300 mm wafer reactor, and explored both ideal and nonideal
self-limited kinetics. The model results are in agreement with experimental results and
analytic expressions obtained using a simple plug-flow model for the cylindrical tube
reactor. We also extended the simulations to consider two nonideal self-limited processes:
soft-saturating processes characterized by a slow reaction pathway and processes where
surface by-products can compete with the precursor for the same pool of adsorption sites.
Our results show that it is possible to have a self-limited process with saturated yet
inhomogeneous growth profiles due to the competition of reactor by-products. This is in
agreement with experimental observations for titanium dioxide ALD from titanium
tetraisopropoxide and titanium tetrachloride precursors. |
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ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/6.0001212 |