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Properties of zinc oxide films grown on sapphire substrates using high-temperature H2O generated by a catalytic reaction on platinum nanoparticles
The authors investigated the characteristics of ZnO films grown on a-plane (11-20) sapphire substrates at 773–873 K using a reaction between dimethylzinc and high-temperature H2O generated by a catalytic reaction on Pt nanoparticles. The growth rate was 0.02–0.07 μm min−1. The largest electron mobil...
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Published in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2014-03, Vol.32 (2) |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The authors investigated the characteristics of ZnO films grown on a-plane (11-20) sapphire substrates at 773–873 K using a reaction between dimethylzinc and high-temperature H2O generated by a catalytic reaction on Pt nanoparticles. The growth rate was 0.02–0.07 μm min−1. The largest electron mobility and the smallest residual carrier concentration for the ZnO films were 169 cm2 V−1 s−1 and 1.6 × 1017 cm−3, respectively. X-ray diffraction patterns for the ZnO films exhibited intense (0002) and (0004) peaks associated with ZnO (0001) planes. The minimum full width at half maximum of the ω-rocking curve for ZnO (0002) was less than 0.1°. In a ZnO film with a high electron mobility, no rotational domains were identified using a ZnO (10-10) ϕ scan. From secondary ion mass spectroscopy, a hydrogen concentration of 3 × 1018 cm−3 and a boron concentration of 2–5 × 1017 cm−3 were determined. These were identified as extrinsic donor impurities. |
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ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/1.4831969 |