Advances in silicon carbide science and technology at the micro- and nanoscales

Advances in silicon carbide microfabrication and growth process optimization for silicon carbide nanostructures are ushering in new opportunities for microdevices capable of operation in a variety of demanding applications, involving high temperature, radiation, or corrosive environment. This review...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2013-09, Vol.31 (5)
Main Authors: Maboudian, Roya, Carraro, Carlo, Senesky, Debbie G., Roper, Christopher S.
Format: Article
Language:English
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Summary:Advances in silicon carbide microfabrication and growth process optimization for silicon carbide nanostructures are ushering in new opportunities for microdevices capable of operation in a variety of demanding applications, involving high temperature, radiation, or corrosive environment. This review focuses on the materials science and processing technologies for silicon carbide thin films and low dimensional structures, and details recent progress in manufacturing technology, including deposition, metallization, and fabrication of semiconductor microdevices, with emphasis on sensor technology. The challenges remaining in developing silicon carbide as a mainstay materials platform are discussed throughout.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.4807902