Ballistic electron emission microscopy of “on-surface” self-assembled InAs dots and wetting layers

In this work ballistic electron emission microscopy and spectroscopy (BEEM/BEES) are employed to investigate electronic properties of self-assembled InAs quantum dots on a GaAs substrate. BEEM spectra are presented for positions on the dots on the one hand and for “off-dot” regions, i.e., on the wet...

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Bibliographic Details
Published in:J VAC SCI TECHNOL B MICROELECTRON NANOMETER STRUCT 2002-01, Vol.20 (1), p.373-378, Article 373
Main Authors: Rakoczy, D., Strasser, G., Smoliner, J.
Format: Article
Language:English
Subjects:
Band structure
Electron emission
Electron transport properties
Molecular beam epitaxy
Monomers
Self assembly
Semiconducting gallium arsenide
Semiconducting indium compounds
Thermal effects
Wetting
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Summary:In this work ballistic electron emission microscopy and spectroscopy (BEEM/BEES) are employed to investigate electronic properties of self-assembled InAs quantum dots on a GaAs substrate. BEEM spectra are presented for positions on the dots on the one hand and for “off-dot” regions, i.e., on the wetting layer, on the other hand. The local barrier height variations on the dots and on the InAs wetting layer are studied systematically and compared with data from the literature obtained on homogeneous InAs layers of various thickness. In addition, the temperature dependence of the InAs–GaAs barrier height is investigated. At low temperatures, evidence of higher conduction bands both in the GaAs and in the InAs dots is found.
ISSN:0734-211X
0734-2101
1071-1023
1520-8567
1520-8559
DOI:10.1116/1.1430241