Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films

In this study, all-inorganic two-dimensional (2D) perovskite Cs2Pb(SCN)2Br2 was employed in a thin-film vertical structure prototype memristor. The device consisted of a Cs2Pb(SCN)2Br2 film prepared through solution approach, sandwiched between an Ag electrode and a TiO2/FTO substrate bottom electro...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2024-04, Vol.124 (17)
Main Authors: Xu, Jia, Zhang, Yu, Ding, Ying, Gong, Yuhua, Yao, Jianxi
Format: Article
Language:English
Subjects:
Bromine
Electrodes
Memory devices
Memristors
Perovskites
Room temperature
Substrates
Switching
Thin films
Titanium dioxide
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, all-inorganic two-dimensional (2D) perovskite Cs2Pb(SCN)2Br2 was employed in a thin-film vertical structure prototype memristor. The device consisted of a Cs2Pb(SCN)2Br2 film prepared through solution approach, sandwiched between an Ag electrode and a TiO2/FTO substrate bottom electrode. Two types of resistive switching (RS) behaviors were observed within a single device at different temperatures. At room temperature, the dominant control mechanism was the interface Schottky barrier, whereas at higher temperatures, the primary driving force shifted to the conductive channel. The device has an on/off ratio exceeding 103 under the interface control mechanism. The migration of mobile bromine vacancies within the Cs2Pb(SCN)2Br2 film, whose concentration was enhanced by the infiltration and reaction of the Ag active electrode within the Cs2Pb(SCN)2Br2 film, is proposed to be the root cause for both types of RS characteristics. These findings offer insights into the potential application of 2D Cs2Pb(SCN)2Br2 perovskite in RS memory devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0196160