An analog to digital converter in a SiC CMOS technology for high-temperature applications

Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal–oxide–semiconductor technology now available throug...

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Bibliographic Details
Published in:Applied physics letters 2024-04, Vol.124 (15)
Main Authors: Mo, Jiarui, Niu, Yunfan, May, Alexander, Rommel, Mathias, Rossi, Chiara, Romijn, Joost, Zhang, Guoqi, Vollebregt, Sten
Format: Article
Language:English
Subjects:
Analog to digital converters
CMOS
Data converters
Dielectric breakdown
High temperature
Integrated circuits
Parameters
Silicon carbide
Threshold voltage
Wide bandgap semiconductors
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Summary:Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal–oxide–semiconductor technology now available through Europractice. The MOSFET component in this technology was measured up to 500 °C, and the key parameters, such as threshold voltage, field-effect mobility, and channel-length modulation parameters, were extracted. A 4-bit flash data converter, consisting of 266 transistors, is implemented with this technology and demonstrates correct operation up to 400 °C. Finally, the gate oxide quality is investigated by time-dependent dielectric breakdown measurements at 500 °C. A field-acceleration factor of 4.4 dec/(MV/cm) is obtained by applying the E model.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0195013