Photogalvanic spectroscopy on MnBi2Te4 topological insulator thin films

We demonstrate zero-bias mid-infrared photocurrent generation in topological insulator MnBi2Te4 thin films. The symmetry breakings at the surface and interfaces lead to the coexistence of Dirac and Rashba band states, which enable two kinds of photogalvanic responses. One is the magneto-photogalvani...

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Bibliographic Details
Published in:Applied physics letters 2024-04, Vol.124 (16)
Main Authors: Takagi, Tsubasa, Watanabe, Ryota, Yoshimi, Ryutaro, Tsukazaki, Atsushi, Takahashi, Kei S., Kawasaki, Masashi, Tokura, Yoshinori, Ogawa, Naoki
Format: Article
Language:English
Subjects:
Magnetic fields
Photoelectric effect
Photoelectric emission
Polarization
Room temperature
Spectroscopy
Symmetry
Temperature dependence
Thin films
Topological insulators
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Summary:We demonstrate zero-bias mid-infrared photocurrent generation in topological insulator MnBi2Te4 thin films. The symmetry breakings at the surface and interfaces lead to the coexistence of Dirac and Rashba band states, which enable two kinds of photogalvanic responses. One is the magneto-photogalvanic effect in the presence of an external in-plane magnetic field perpendicular to photocurrent direction, and the other is the light-polarization-dependent linear photogalvanic effect arising from in-plane symmetry breakings, both observed up to room temperature. We disentangle these contributions by light-polarization and temperature dependent spectroscopy under the varying magnetic field.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0193680