Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

We investigate the emerging chemical states of TiN/HfO2/TiN capacitors and focus especially on the identification of vacancies and impurities in the ferroelectric HfO2 layers, which are produced either by physical vapor deposition (PVD) or atomic layer deposition (ALD). Depending on the specific gro...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2021-01, Vol.118 (3)
Main Authors: Baumgarten, Lutz, Szyjka, Thomas, Mittmann, Terence, Materano, Monica, Matveyev, Yury, Schlueter, Christoph, Mikolajick, Thomas, Schroeder, Uwe, Müller, Martina
Format: Article
Language:English
Subjects:
Applied physics
Atomic layer epitaxy
Capacitors
Electric fields
Ferroelectric materials
Ferroelectricity
Hafnium oxide
Impurities
Photoelectrons
Physical vapor deposition
Spectral signatures
Vacancies
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigate the emerging chemical states of TiN/HfO2/TiN capacitors and focus especially on the identification of vacancies and impurities in the ferroelectric HfO2 layers, which are produced either by physical vapor deposition (PVD) or atomic layer deposition (ALD). Depending on the specific growth conditions, we identify different mechanisms of oxygen vacancy formation. Corresponding spectral features are consistently observed for all HfO2- and TiN-related core levels by hard x-ray photoelectron spectroscopy (HAXPES). In ALD-grown samples, we find spectral signatures for the electronic interaction between oxygen vacancies and nitrogen impurities. By linking the HAXPES results to electric field cycling experiments on the TiN/HfO2/TiN capacitors, we discuss possible formation mechanisms and stabilization of the ferroelectric HfO2 phase directly related to specific PVD or ALD conditions.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0035686