Nonvolatile manipulation of electronic and ferromagnetic properties of NiO–Ni epitaxial film by ferroelectric polarization charge

NiO–Ni composite films were heteroepitaxially grown on (111)-oriented ferroelectric 0.31Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.34PbTiO3 (PIN-PMN-PT) single-crystal substrates by pulsed laser deposition. The NiO films prepared in high vacuum are n-type conducting and possess room-temperature ferroma...

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Bibliographic Details
Published in:Applied physics letters 2020-12, Vol.117 (23)
Main Authors: Yan, Ming-Yuan, Yan, Jian-Min, Zhang, Meng-Yuan, Chen, Ting-Wei, Gao, Guan-Yin, Wang, Fei-Fei, Chai, Yang, Zheng, Ren-Kui
Format: Article
Language:English
Subjects:
Applied physics
Charge density
Electric fields
Ferroelectric materials
Ferroelectricity
Ferromagnetic materials
Heterostructures
High vacuum
Magnetic properties
Magnetism
Memory devices
Nickel oxides
Polarization
Pulsed laser deposition
Pulsed lasers
Room temperature
Single crystals
Substrates
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Summary:NiO–Ni composite films were heteroepitaxially grown on (111)-oriented ferroelectric 0.31Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.34PbTiO3 (PIN-PMN-PT) single-crystal substrates by pulsed laser deposition. The NiO films prepared in high vacuum are n-type conducting and possess room-temperature ferromagnetism, which originates from oxygen vacancies and the presence of the second Ni phase, respectively. Taking advantage of the electric-field-induced ferroelectric polarization charges, we realized in situ reversible and nonvolatile modulation of both the electrical resistance and magnetism of the film. A relative resistance change of ∼470% is obtained at room temperature, while an appreciable magnetization change of ∼15% was achieved at 50 K by switching the polarization states of PIN-PMN-PT. The coexistence of charge-density-tunable electronic and magnetic properties of NiO–Ni/PIN-PMN-PT heterostructures may provide a strategy to design charge-mediated multiferroic devices for nonvolatile memory and spintronic applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0025335