Non-volatile, small-signal capacitance in ferroelectric capacitors

Tunable, non-volatile, small-signal capacitance is observed and characterized in a TiN/ferroelectric Hf0.5Zr0.5O2 (HZO)/TiN stack. The non-volatility of the small-signal capacitance originates from the non-uniform distribution of oxygen vacancies near/at the bottom electrode, resulting in polarity-d...

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Bibliographic Details
Published in:Applied physics letters 2020-08, Vol.117 (7)
Main Authors: Luo, Yuan-Chun, Hur, Jae, Wang, Panni, Khan, Asif Islam, Yu, Shimeng
Format: Article
Language:English
Subjects:
Analog circuits
Applied physics
Capacitance
Capacitors
Domain walls
Ferroelectric materials
Ferroelectricity
Polarity
Volatility
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Summary:Tunable, non-volatile, small-signal capacitance is observed and characterized in a TiN/ferroelectric Hf0.5Zr0.5O2 (HZO)/TiN stack. The non-volatility of the small-signal capacitance originates from the non-uniform distribution of oxygen vacancies near/at the bottom electrode, resulting in polarity-dependent responses of the domain-wall vibration. Our hypothesis also agrees with the observed frequency dispersion, which could be explained with the Maxwell Wagner effect. Furthermore, we have shown more than 104 endurance and 10-year retention at 85 °C for this non-volatile capacitance. With tunable capacitance at a fixed bias, HZO capacitors can potentially be applied to reconfigurable analog or mixed-signal circuits.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0018937