Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorpo...

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Bibliographic Details
Published in:Journal of applied physics 2019-08, Vol.126 (8)
Main Authors: Luna, E., Wu, M., Aoki, T., McCartney, M. R., Puustinen, J., Hilska, J., Guina, M., Smith, D. J., Trampert, A.
Format: Article
Language:English
Subjects:
Adatoms
Applied physics
Bismuth
Domains
Epitaxial growth
Gallium arsenide
Low temperature
Microstructure
Molecular beam epitaxy
Morphology
Periodic variations
Scanning transmission electron microscopy
Substrates
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Summary:Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorporation of Bi from the underlying Ga(As,Bi) layer growth. Aberration-corrected scanning transmission electron microscopy techniques enabled two types of domain to be identified: (i) twinned domains and (ii) Bi-rich atomically ordered domains with triple periodicity. The observed microstructure is discussed in the context of LT-MBE growth in combination with the presence of a small amount of Bi, which seemingly alters adatom diffusivity. Surface processes and (surface) kinetic factors play a key role in the resultant morphology and explain the appearance of both types of domains.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5111532