Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM

Dislocation structure and cathodoluminescence (CL) of locally plastically deformed n-GaN is investigated in transmission electron microscope (TEM) and in scanning electron microscope (SEM). Multiple dense indentations of the samples with subsequent TEM foil preparation enables to study the same disl...

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Bibliographic Details
Main Authors: Medvedev, O. S., Vyvenko, O. F., Ubyivovk, E. V., Shapenkov, S. V., Seibt, M.
Format: Conference Proceeding
Language:English
Subjects:
Cathodoluminescence
Deformation
Electron microscopes
Foils
Luminescence
Optical properties
Scanning electron microscopy
Screw dislocations
Transmission electron microscopy
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Summary:Dislocation structure and cathodoluminescence (CL) of locally plastically deformed n-GaN is investigated in transmission electron microscope (TEM) and in scanning electron microscope (SEM). Multiple dense indentations of the samples with subsequent TEM foil preparation enables to study the same dislocation-rich region of the specimen with both TEM and CL-SEM and to establish direct correlation between the types of dislocations and their luminescent properties. It is shown that only straight segments of a-screw dislocations possess intrinsic luminescent band at 3.12 eV at room temperature confirming previous conclusion made from independent SEM and TEM results.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5087682