Growth mechanism & characterization of MoBiInS5 thin film synthesized by arrested precipitation technique

Highly ordered quaternary semiconducting MoBiInS5nanocrystalline thin films have been successfullysynthesized by simple and convenient Arrested Precipitation Technique (APT). High purity organometallic complexes of Mo–triethanolamine (Mo– TEA), Bi–triethanolamine (Bi–TEA), In–triethanolamine (In–TEA...

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Bibliographic Details
Main Authors: Pawar, N. B., Kharade, S. D., Khot, K. V., Bhosale, P. N.
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Chemical synthesis
Crystal structure
Energy gap
Field emission microscopy
Microscopy
Morphology
Organic chemistry
Reducing agents
Scanning electron microscopy
Sodium dithionite
Thin films
Triethanolamine
X ray photoelectron spectroscopy
X-ray diffraction
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Summary:Highly ordered quaternary semiconducting MoBiInS5nanocrystalline thin films have been successfullysynthesized by simple and convenient Arrested Precipitation Technique (APT). High purity organometallic complexes of Mo–triethanolamine (Mo– TEA), Bi–triethanolamine (Bi–TEA), In–triethanolamine (In–TEA) allow to react with thioacetamide (CH3CSNH2) in the presence of sodium dithionite (Na2S2O4) as a reducing agent in an aqueous alkaline reaction bath. As synthesized thin films were characterized by X-ray diffraction, which reveals that material is nanocrystalline with orthorhombic and rhombohedral crystal structure. Field emission scanning electron microscopy demonstrated that porous nanonoodles like morphology. Topography and roughness of film were measured by atomic force microscopy (AFM). X-ray photoelectron spectroscopy (XPS) shows presence of Mo, Bi, In and S elements in stoichiometric ratio confirms the chemical formula MoBiInS5. The optical absorbance of MoBiInS5 thin films show direct allowed transition in visible region having band gap energy is 1.07 eV. The photoelectrochemical properties of MoBiInS5 thin films were studied in I-/I3- redox electrolyte which observed that 0.34% photo-conversion efficiency.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5047730