Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3

Magnesium-doped gallium oxide may be utilized as a semi-insulating material for future generations of power devices. Spectroscopy and hybrid functional calculations were used to investigate defect levels in Czochralski-grown β-Ga2O3. Substitutional Mg dopants act as deep acceptors, while substitutio...

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Bibliographic Details
Published in:Applied physics letters 2018-07, Vol.113 (5)
Main Authors: Ritter, Jacob R., Huso, Jesse, Dickens, Peter T., Varley, Joel B., Lynn, Kelvin G., McCluskey, Matthew D.
Format: Article
Language:English
Subjects:
Applied physics
ATOMIC AND MOLECULAR PHYSICS
Compensation
Electronic devices
Gallium oxides
Hydrogen bonds
Iridium
Magnesium
Passivity
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Summary:Magnesium-doped gallium oxide may be utilized as a semi-insulating material for future generations of power devices. Spectroscopy and hybrid functional calculations were used to investigate defect levels in Czochralski-grown β-Ga2O3. Substitutional Mg dopants act as deep acceptors, while substitutional Ir impurities are deep donors. Hydrogen-annealed Ga2O3:Mg shows an IR peak at 3492 cm−1, assigned to an O-H bond-stretching mode of a neutral MgH complex. Despite compensation by Ir and Si and hydrogen passivation, high concentrations of Mg (1019 cm−3) can push the Fermi level to mid-gap or lower.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5044627