Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

In this paper, we aim to decompose gate capacitance components in InGaAs/InAlAs quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs), in an effort to physically investigate their gate capacitance (Cg). First, we verified their validity with 1-D simulation and experimental C...

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Bibliographic Details
Published in:AIP advances 2018-07, Vol.8 (7), p.075203-075203-7
Main Authors: Jo, Hyeon-Bhin, Park, Jung-Ho, Son, Seung-Woo, Baek, Ji-Min, Yun, Do-Young, Kang, Yeonsung, Seo, Yong-Hyun, Yung, Lee Min, Lee, Jung-Hee, Kim, Tae-Woo, Kim, Dae-Hyun
Format: Article
Language:English
Subjects:
Capacitance
Indium aluminum arsenides
Indium gallium arsenides
MOSFETs
Quantum wells
Semiconductor devices
Transistors
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Summary:In this paper, we aim to decompose gate capacitance components in InGaAs/InAlAs quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs), in an effort to physically investigate their gate capacitance (Cg). First, we verified their validity with 1-D simulation and experimental Cg data in various types of InGaAs/InAlAs QW MOSFETs with different channel thickness (tch). Both quantum capacitance (CQ) and centroid capacitance (Ccent) were highly relevant to total gate capacitance (Cg) of the InGaAs/InAlAs QW MOSFETs. Second, the total Cg did not saturate at a strong inversion regime. This is a consequence of the second subband inversion layer capacitance (Cinv_2) and, more importantly, its increase with VG. Lastly, we studied the role of channel thickness (tch) scaling, which helps to increase the total gate capacitance by enhancing both CQ and Ccent.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5034041