Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence

The optical properties of InGaN/GaN core-shell microrods are studied by time-resolved cathodoluminescence. Probing the carrier dynamics along the length of the rod from 4 to 300 K enables us to decompose radiative (τr) and non-radiative (τnr) lifetimes. At 300 K, τnr decreases from 500 at the bottom...

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Bibliographic Details
Published in:Applied physics letters 2018-01, Vol.112 (5)
Main Authors: Liu, W., Mounir, C., Rossbach, G., Schimpke, T., Avramescu, A., Lugauer, H.-J., Strassburg, M., Schwarz, U., Deveaud, B., Jacopin, G.
Format: Article
Language:English
Subjects:
Applied physics
Cathodoluminescence
Condensed Matter
Engineering Sciences
Gallium nitrides
Materials Science
Micro and nanotechnologies
Microelectronics
Optical properties
Optics
Photonic
Physics
Point defects
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Summary:The optical properties of InGaN/GaN core-shell microrods are studied by time-resolved cathodoluminescence. Probing the carrier dynamics along the length of the rod from 4 to 300 K enables us to decompose radiative (τr) and non-radiative (τnr) lifetimes. At 300 K, τnr decreases from 500 at the bottom of the rod to 150 ps at its top. This variation results from an increased In-content in the upper part of the rod that causes a higher density of point defects. We further observe that thanks to the use of nonpolar m-plane growth, τr remains below 1.5 ns up to room temperature even with a thick active layer, which is promising for pushing the onset of the efficiency droop to higher current densities.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5009728