Modeling of I-V characteristics in symmetric double-gate polysilicon thin-film transistors

Modeling of I-V characteristics in symmetric double-gate polysilicon thin-film transistors

A new closed-form approximation for surface potential and drain current (DC) in symmetric double-gate polysilicon thin-film transistors (DG poly-Si TFTs) is proposed. The solution of the surface potential is single-piece and suitable for a wide range of gate voltages under different conditions. A co...

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Bibliographic Details
Published in:AIP advances 2017-06, Vol.7 (6), p.065201-065201-10
Main Authors: Ma, Xiaoyu, Chen, Songlin, Deng, Wanling, Huang, Junkai
Format: Article
Language:eng
Subjects:
Mathematical analysis
Mathematical models
Semiconductor devices
Thin film transistors
Transistors
Online Access:Get full text
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Summary:A new closed-form approximation for surface potential and drain current (DC) in symmetric double-gate polysilicon thin-film transistors (DG poly-Si TFTs) is proposed. The solution of the surface potential is single-piece and suitable for a wide range of gate voltages under different conditions. A comparison with numerical results shows that this scheme gives an accurate description of surface potential. The development of surface-potential-based compact model for I-V characteristics is achieved based on this calculation. Finally, the validity of the model is verified by comparisons with various experimental data. It is showing that the model is accurate over a wide range of operation regions.
ISSN:2158-3226
2158-3226