Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves

The temperature evolution of spin relaxation time, τ sf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. τ sf at 300 K is estimated to be 1.68 ± 0.03 ns and monotonically increased with decreasing temperature down to 100 K. Below 100 K,...

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Bibliographic Details
Published in:Applied physics letters 2017-05, Vol.110 (19)
Main Authors: Lee, Soobeom, Yamashita, Naoto, Ando, Yuichiro, Miwa, Shinji, Suzuki, Yoshishige, Koike, Hayato, Shiraishi, Masashi
Format: Article
Language:English
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Summary:The temperature evolution of spin relaxation time, τ sf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. τ sf at 300 K is estimated to be 1.68 ± 0.03 ns and monotonically increased with decreasing temperature down to 100 K. Below 100 K, in contrast, it shows almost a constant value of ca. 5 ns. The temperature dependence of the conductivity of the Si channel shows a similar behavior to that of the τ sf, i.e., monotonically increasing with decreasing temperature down to 100 K and a weak temperature dependence below 100 K. The temperature evolution of conductivity reveals that electron scattering due to magnetic impurities is negligible. A comparison between τ sf and momentum scattering time reveals that the dominant spin scattering mechanism in the Si is the Elliott-Yafet mechanism, and the ratio of the momentum scattering time to the τ sf attributed to nonmagnetic impurities is approximately 3.77 × 10−6, which is more than two orders of magnitude smaller than that of copper.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4982966