A novel technique based on a plasma focus device for nano-porous gallium nitride formation on P-type silicon

A new deposition formation was observed with a Mather-type Plasma Focus Device (MPFD). MPFD was unitized to fabricate porous Gallium Nitride (GaN) on p-type Silicon (Si) substrate with a (100) crystal orientation for the first time in a deposition process. GaN was deposited on Si with 4 and 7 shots....

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Bibliographic Details
Published in:Physics of plasmas 2017-04, Vol.24 (4)
Main Authors: Sharifi Malvajerdi, S., Salar Elahi, A., Habibi, M.
Format: Article
Language:English
Subjects:
Annealing furnaces
Atomic force microscopy
Chemical vapor deposition
Continuous flow
Continuous furnaces
Crystal structure
Electric furnaces
Emission analysis
Energy dispersive X ray spectroscopy
Field emission microscopy
Focus devices
Gallium nitrides
Nitrogen
Nitrogen plasma
Organic chemistry
Oxidation
Photoluminescence
Plasma focus
Plasma physics
Scanning electron microscopy
Silicon substrates
Spectrum analysis
Wurtzite
X ray spectra
X-ray diffraction
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Summary:A new deposition formation was observed with a Mather-type Plasma Focus Device (MPFD). MPFD was unitized to fabricate porous Gallium Nitride (GaN) on p-type Silicon (Si) substrate with a (100) crystal orientation for the first time in a deposition process. GaN was deposited on Si with 4 and 7 shots. The samples were subjected to a 3 phase annealing procedure. First, the semiconductors were annealed in the PFD with nitrogen plasma shots after their deposition. Second, a thermal chemical vapor deposition annealed the samples for 1 h at 1050 °C by nitrogen gas at a pressure of 1 Pa. Finally, an electric furnace annealed the samples for 1 h at 1150 °C with continuous flow of nitrogen. Porous GaN structures were observed by Field emission scanning electron microscopy and atomic force microscopy. Furthermore, X-Ray diffraction analysis was carried out to determine the crystallinity of GaN after the samples were annealed. Energy-Dispersive X-Ray Spectroscopy indicated the amount of gallium, nitrogen, and oxygen due to the self-oxidation of the samples. Photoluminescence spectroscopy revealed emissions at 2.94 eV and 3.39 eV, which shows that hexagonal wurtzite crystal structures were formed.
ISSN:1070-664X
1089-7674
DOI:10.1063/1.4980859