Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

Interface characterization was carried out on Al2O3/GaN structures using epitaxial n-GaN layers grown on free-standing GaN substrates with relatively low dislocation density (

Bibliographic Details

Published in:	Applied physics letters 2016-10, Vol.109 (16)
Main Authors:	Kaneki, Shota, Ohira, Joji, Toiya, Shota, Yatabe, Zenji, Asubar, Joel T., Hashizume, Tamotsu
Format:	Article
Language:	English
Subjects:	Aluminum oxide Annealing Applied physics Atomic layer epitaxy Bias Dislocation density Dispersion Electric potential Epitaxial growth Gallium nitrides Metal oxides Substrates
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!