Flexible germanium nanomembrane metal-semiconductor-metal photodiodes

We demonstrate flexible Ge nanomembrane (Ge NM) based metal-semiconductor-metal photodiodes. The effect of uniaxial tensile strain on Ge NM based photodiodes was investigated using bending fixtures. Dark current density is decreased from 21.5 to 4.8 mA/cm2 at 3 V by a tensile strain of 0.42% while p...

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Bibliographic Details
Published in:Applied physics letters 2016-08, Vol.109 (5)
Main Authors: Kim, Munho, Seo, Jung-Hun, Yu, Zongfu, Zhou, Weidong, Ma, Zhenqiang
Format: Article
Language:English
Subjects:
ABSORPTION
Applied physics
BENDING
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
Dark current
Fixtures
GERMANIUM
PHOTODIODES
PHOTONS
SEMICONDUCTOR MATERIALS
Shear strength
STRAINS
TENSILE PROPERTIES
Tensile strain
WAVELENGTHS
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Summary:We demonstrate flexible Ge nanomembrane (Ge NM) based metal-semiconductor-metal photodiodes. The effect of uniaxial tensile strain on Ge NM based photodiodes was investigated using bending fixtures. Dark current density is decreased from 21.5 to 4.8 mA/cm2 at 3 V by a tensile strain of 0.42% while photon responsivity is increased from 0.2 to 0.45 A/W at the wavelength of 1.5 μm. Enhanced responsivity is also observed at longer wavelengths up to 1.64 μm. The uniaxial tensile strain effectively reduces the direct bandgap energy of the Ge NM, leading to a shift of the absorption edge toward a longer wavelength.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4960460