Band gap engineering of N-alloyed Ga2O3 thin films

The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH3 and Ar gas for 60 minutes. Then they were annea...

Full description

Saved in:
Bibliographic Details
Published in:AIP advances 2016-06, Vol.6 (6), p.065016-065016-6
Main Authors: Song, Dongyu, Li, Li, Li, Bingsheng, Sui, Yu, Shen, Aidong
Format: Article
Language:English
Subjects:
Ambience
Ammonia
Annealing
Band gap
Energy gap
Fused silica
Gallium oxides
Silicon dioxide
Substrates
Ternary alloys
Thin films
X-ray diffraction
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH3 and Ar gas for 60 minutes. Then they were annealed in NH3 ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinic and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p -Ga3d orbits and formation of hexagonal structure.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4954720