Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron micro...

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Bibliographic Details
Main Authors: Bazlov, N., Pilipenko, N., Vyvenko, O., Kotina, I., Petrov, Yu, Mikhailovskii, V., Ubyivovk, E., Zharinov, V.
Format: Conference Proceeding
Language:English
Subjects:
ACTIVATION ENERGY
ALUMINIUM NITRIDES
ALUMINIUM OXIDES
Aluminum
Aluminum nitride
Aluminum oxide
CAPACITANCE
Chemical composition
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DENSITY
ELECTRIC CONDUCTIVITY
Electric potential
Electrical properties
Electron traps
Film thickness
LAYERS
Magnetic properties
Magnetron sputtering
MAGNETRONS
Microscopy
NANOSTRUCTURES
Organic chemistry
SCANNING ELECTRON MICROSCOPY
SILICON
Silicon substrates
SUBSTRATES
Surface layers
SURFACES
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
TRAPS
Volt-ampere characteristics
Zinc sulfide
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Summary:AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained traps of positive charges with concentration of about 4 × 1018 cm−3. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 1012 cm−2. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 1010 cm−2 were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4954356