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Multilevel sensitization of Er 3 + in low-temperature-annealedsilicon-rich SiO 2
The dynamics of Er 3 + excitation in low-temperature-annealed Si-rich SiO 2 are studied. It is demonstrated that Si-excess-related indirect excitation is fast (transfer time τ tr < 27 ns ) and occurs into higher lying Er 3 + levels as well as directly into the first excited state ( I 4 13 / 2 )...
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| Published in: | Applied physics letters 2008-12, Vol.93 (23), p.233120-233120-3 |
|---|---|
| Main Authors: | , , , |
| Format: | Article |
| Language: | |
| Citations: | Items that this one cites |
| Online Access: | Get full text |
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| Summary: | The dynamics of
Er
3
+
excitation in low-temperature-annealed Si-rich
SiO
2
are studied. It is demonstrated that Si-excess-related indirect excitation is fast (transfer time
τ
tr
<
27
ns
) and occurs into higher lying
Er
3
+
levels as well as directly into the first excited state
(
I
4
13
/
2
)
. By monitoring the time-dependent
Er
3
+
emission at 1535 nm, the multilevel nature of the
Er
3
+
sensitization is shown to result in two types of excitation of the
I
4
13
/
2
state: a fast excitation process
(
τ
tr
<
27
ns
)
directly into the
I
4
13
/
2
level and a slow excitation process due to fast excitation into
Er
3
+
levels above the
I
4
13
/
2
level, followed by internal
Er
3
+
relaxation with a time constant
τ
32
>
2.3
μ
s
. The fast and slow excitations of the
I
4
13
/
2
level account for an approximately equal fraction of the excitation events: 45%-50% and 50%-55%, respectively. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.3044480 |