Integration of In 2 O 3 nanoparticle based ozone sensors with Ga In N ∕ Ga N light emitting diodes

There is a high demand for compact low-cost ozone sensors. It has been shown recently that In 2 O 3 nanolayers can act as ozone sensitive films activated at room temperature by ultraviolet light. In the present work, the authors integrate ultrathin layers of In 2 O 3 nanoparticles and a Ga In N ∕ Ga...

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Published in:Applied physics letters 2007-09, Vol.91 (10), p.103509-103509-3
Main Authors: Wang, Ch Y., Cimalla, V., Kups, Th, Röhlig, C.-C., Stauden, Th, Ambacher, O., Kunzer, M., Passow, T., Schirmacher, W., Pletschen, W., Köhler, K., Wagner, J.
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Summary:There is a high demand for compact low-cost ozone sensors. It has been shown recently that In 2 O 3 nanolayers can act as ozone sensitive films activated at room temperature by ultraviolet light. In the present work, the authors integrate ultrathin layers of In 2 O 3 nanoparticles and a Ga In N ∕ Ga N based blue light emitting diode (LED) on a single sensor chip. The integrated sensor was found to be sensitive to O 3 concentrations as low as ∼ 40 ppb . These results demonstrate that by integrating Ga In N ∕ Ga N based blue LEDs and metal oxide sensing layers back to back on a single chip, compact and robust gas sensors can be realized.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2779971