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Nonvolatile switching characteristics of laser-ablated Ge 2 Sb 2 Te 5 nanoparticles for phase-change memory applications
Electrical characteristics of Ge 2 Sb 2 Te 5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [ H. R. Yoon , J. Non-Cryst. Solids 351 , 3430 ( 2005...
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Published in: | Applied physics letters 2007-01, Vol.90 (2), p.023101-023101-3 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Electrical characteristics of
Ge
2
Sb
2
Te
5
(GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by
in situ
pulsed laser ablation and their crystal structure formation was confirmed [
H. R. Yoon
,
J. Non-Cryst. Solids
351
,
3430
(
2005
)
]. A stacked structure of the GST nanoparticles with
10
nm
of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2430481 |