Nonvolatile switching characteristics of laser-ablated Ge 2 Sb 2 Te 5 nanoparticles for phase-change memory applications

Electrical characteristics of Ge 2 Sb 2 Te 5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [ H. R. Yoon , J. Non-Cryst. Solids 351 , 3430 ( 2005...

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Published in:Applied physics letters 2007-01, Vol.90 (2), p.023101-023101-3
Main Authors: Suh, Dong-Seok, Lee, Eunhye, Kim, Kijoon H. P., Noh, Jin-Seo, Shin, Woong-Chul, Kang, Youn-Seon, Kim, Cheolkyu, Khang, Yoonho, Yoon, H. R., Jo, W.
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Summary:Electrical characteristics of Ge 2 Sb 2 Te 5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [ H. R. Yoon , J. Non-Cryst. Solids 351 , 3430 ( 2005 ) ]. A stacked structure of the GST nanoparticles with 10 nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2430481