Characterization of focused-ion-beam-induced damagein n -type silicon using Schottky contact

The effects of focused-ion-beam-induced damage on electrical properties of n -type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10 - 30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4 × 10 − 4 Pa . From current-voltage-temperature measurements, barri...

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Bibliographic Details
Published in:Applied physics letters 2006-04, Vol.88 (15), p.152108-152108-3
Main Authors: Xia, Ling, Wu, Wengang, Hao, Yilong, Wang, Yangyuan, Xu, Jun
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Summary:The effects of focused-ion-beam-induced damage on electrical properties of n -type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10 - 30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4 × 10 − 4 Pa . From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV . The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2195109