A Cu3PS4 nanoparticle hole selective layer for efficient inverted perovskite solar cellsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ta12100a

Cu 3 PS 4 nanoparticles are used as a new inorganic hole selective layer (HSL) to fabricate efficient perovskite thin-film solar cells in the inverted device configuration. Compared with other HSL materials used in efficient perovskite solar cells, Cu 3 PS 4 has the smallest effective mass for holes...

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Main Authors: Yin, Xinxing, McClary, Scott A, Song, Zhaoning, Zhao, Dewei, Graeser, Brian, Wang, Changlei, Shrestha, Niraj, Wang, Xiaoming, Chen, Cong, Li, Chongwen, Subedi, Kamala K, Ellingson, Randy J, Tang, Weihua, Agrawal, Rakesh, Yan, Yanfa
Format: Article
Language:English
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Summary:Cu 3 PS 4 nanoparticles are used as a new inorganic hole selective layer (HSL) to fabricate efficient perovskite thin-film solar cells in the inverted device configuration. Compared with other HSL materials used in efficient perovskite solar cells, Cu 3 PS 4 has the smallest effective mass for holes. Additionally, Cu 3 PS 4 has a valence band energy level of −5.05 eV, which is suitable for effectively extracting holes generated in perovskite absorbers. These reveal intrinsic properties of Cu 3 PS 4 that make it an excellent HSL material for perovskite solar cells. We further find that a Cu 3 PS 4 nanoparticle HSL promotes grain growth of perovskite thin films, which benefits device performance. Our perovskite solar cells using a Cu 3 PS 4 nanoparticle HSL achieve a maximum power conversion efficiency of 18.17% with small hysteresis and a high fill factor of 81.6%, which is significantly better than the performance of the best control device using the poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) HSL. Cu 3 PS 4 nanoparticles are used as a new inorganic hole selective layer (HSL) to fabricate efficient perovskite thin-film solar cells in the inverted device configuration.
ISSN:2050-7488
2050-7496
DOI:10.1039/c8ta12100a