Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties

We present a simple two-stage vapour-solid synthesis method for the growth of bismuth chalcogenide (Bi 2 Te 3 , Bi 2 Se 3 ) topological insulator nanowires/nanobelts by using Bi 2 Se 3 or Bi 2 Te 3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving a...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale 2015-10, Vol.7 (38), p.15935-15944
Main Authors: Andzane, J, Kunakova, G, Charpentier, S, Hrkac, V, Kienle, L, Baitimirova, M, Bauch, T, Lombardi, F, Erts, D
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a simple two-stage vapour-solid synthesis method for the growth of bismuth chalcogenide (Bi 2 Te 3 , Bi 2 Se 3 ) topological insulator nanowires/nanobelts by using Bi 2 Se 3 or Bi 2 Te 3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as "catalysts" for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N 2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi 2 Se 3 and Bi 2 Te 3 nanowires/nanobelts. The presence of Shubnikov de Haas oscillations in the longitudinal magneto-resistance of the nanowires/nanobelts and their specific angular dependence confirms the existence of 2D topological surface states in the synthesised nanostructures. A simple two-stage vapour-solid synthesis method for the growth of bismuth chalcogenide (Bi 2 Te 3 , Bi 2 Se 3 ) topological insulator nanowires/nanobelts.
ISSN:2040-3364
2040-3372
2040-3372
DOI:10.1039/c5nr04574f