Experimental observation of a torus doubling of a metal/ferroelectric film/semiconductor capacitor

A metal-ferroelectric-semiconductor (MFS) structure was used as a nonlinear capacitor in a series resonance circuit. The following materials were used as components of the MFS structure: aluminium as the metal electrode, Bi4Ti3O12 film as the ferroelectric, and p-type silicon as the semiconductor. T...

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Bibliographic Details
Published in:Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences physical, and engineering sciences, 2008-02, Vol.366 (1864), p.437-446
Main Authors: Diestelhorst, M, Barz, K, Beige, H, Alexe, M, Hesse, D
Format: Article
Language:English
Subjects:
Boundary layers
Capacitance
Capacitors
Chaos theory
Degrees of freedom
Dielectric materials
Electric potential
Electrodes
Metal-Ferroelectric-Semiconductor Structure
Nonlinear Resonance Circuit
Period Doubling
Phase portrait
Semiconductors
Torus Doubling
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Summary:A metal-ferroelectric-semiconductor (MFS) structure was used as a nonlinear capacitor in a series resonance circuit. The following materials were used as components of the MFS structure: aluminium as the metal electrode, Bi4Ti3O12 film as the ferroelectric, and p-type silicon as the semiconductor. The system was driven by a single frequency at suitably chosen amplitudes. Besides the sequences of period-doubling bifurcations which were already observed in the series resonance circuit with a pure ferroelectric capacitor, we found regions with torus-doubling bifurcations by varying the frequency of the driving voltage at suitably high amplitudes. Comparing the behaviour of the series resonance circuit with a pure ferroelectric capacitor and with the MFS structure, we attribute the reason for the new effect of torus doubling to the properties of the ferroelectric-semiconductor boundary layer.
ISSN:1364-503X
1471-2962
DOI:10.1098/rsta.2007.2101